| 000 | 00618nam a22001697a 4500 | ||
|---|---|---|---|
| 003 | inkolt | ||
| 005 | 20240726114408.0 | ||
| 008 | 240710s2024 ii ||||| |||| 00| 0 eng d | ||
| 082 |
_a621.38 _bKAN |
||
| 100 |
_aKanwar, Nilohit Singh _912272 |
||
| 245 |
_aAnalytical modeling of tunnel field effect-transistor : _bunderstanding device behavior and characteristics / _cNilohit Singh Kanwar. |
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| 260 |
_aHamirpur : _bNational Institute of Technology, _c2024 |
||
| 300 | _aiii, 41p. | ||
| 502 |
_bMaster of Technology _cEC-NITH _d2024 |
||
| 720 |
_aRana, Ashwani Kumar _eGuide / Supervisor |
||
| 942 |
_cTD _n0 _xRajesh Pal Patial _y6 _z Rajesh Pal Patial |
||
| 999 |
_c5815 _d5815 |
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