| 000 | 00540nam a22001697a 4500 | ||
|---|---|---|---|
| 003 | inkolt | ||
| 005 | 20240409144259.0 | ||
| 008 | 201203s2017 ii ||||| |||| 00| 0 eng d | ||
| 082 |
_a621.38 _bSHA |
||
| 100 | 1 |
_aSharma, Rajneesh _98358 |
|
| 245 | 1 | _aAnalysis of underlap fully depleted strained soi mosfet | |
| 260 |
_aHamirpur : _bNational Institute of Technology, _c2017 |
||
| 300 | _axxviii, 178p. | ||
| 502 |
_bDoctor of Philosophy _cEC-NITH _d2017 |
||
| 720 |
_aRana, Ashwani Kumar _eGuide / Supervisor |
||
| 942 |
_cTD _n0 _xRajesh Pal Patial _y6 _z Rajesh Pal Patial |
||
| 999 |
_c3481 _d3481 |
||