Reduction of gate induced drain leakage (GIDL) current in short channel SOI MOSFET.
By: Keshari, Amit Kumar
Material type: TextPublisher: Hamirpur : National Institute of Technology, 2013Description: x, 46pGenre/Form: Thesis or Dissertation DDC classification: 621.38 Dissertation note: Master of Technology, Department of Electronics and Communication Engineering, National Institute of Technology Hamirpur, Himachal Pradesh, India - 177005. 2013 Guide / Supervisor: Khanna, Gargi.Item type | Current location | Call number | Status | Date due | Barcode |
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Thesis or Dissertation | Electronics and Communication Engineering (Departmental Library) On Display | 621.38 KES (Browse shelf) | Available | EC-DR-143 |
Master of Technology, Department of Electronics and Communication Engineering, National Institute of Technology Hamirpur, Himachal Pradesh, India - 177005. 2013
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