कोहा @ रा.प्रौ.सं.ह. / KOHA @ NITH

Your cart is empty.

Modeling and reduction of gate current for nano scale mosfet devices

By: Kumar, Ashwani
Material type: TextTextPublisher: Hamirpur : National Institute of Technology, 2011Description: xxii, 188pGenre/Form: Thesis or Dissertation DDC classification: 621.38 Dissertation note: Doctor of Philosophy, Department of Electronics and Communication Engineering, National Institute of Technology Hamirpur, Himachal Pradesh, India - 177005. 2011 Guide / Supervisor: Kapoor, VinodChand, Narottam
Tags from this library: No tags from this library for this title. Log in to add tags.
    Average rating: 0.0 (0 votes)
Item type Current location Call number Status Date due Barcode
Thesis or Dissertation Thesis or Dissertation Central Library
On Display 		621.38 KUM (Browse shelf) Available TH-26
Thesis or Dissertation Thesis or Dissertation Electronics and Communication Engineering (Departmental Library)
On Display 		621.38 KUM (Browse shelf) Available EC-TR-01

Doctor of Philosophy, Department of Electronics and Communication Engineering, National Institute of Technology Hamirpur, Himachal Pradesh, India - 177005. 2011

There are no comments on this title.

to post a comment.
Supported by Central Library, NIT Hamirpur
Powered by KOHA